10-kV Ga<sub>2</sub>O<sub>3</sub> Charge-Balance Schottky Rectifier Operational at 200 °C-Reference-Cited by-同舟云学术

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

Published:2023-08 Issue:8 Volume:44 Page:1268-1271
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qin Yuan¹^ORCID,Xiao Ming¹^ORCID,Porter Matthew¹^ORCID,Ma Yunwei¹,Spencer Joseph¹,Du Zhonghao²^ORCID,Jacobs Alan G.³,Sasaki Kohei⁴^ORCID,Wang Han²,Tadjer Marko³^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA

3. U.S. Naval Research Laboratory, Washington, DC, USA

4. Novel Crystal Technology Inc., Sayama, Japan

Funder

National Science Foundation

Center for Power Electronics Systems Industry Consortium at Virginia Tech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10199118/10158016-aam.pdf

Reference32 articles.

1. Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

2. Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

3. High-Mobility Tri-Gate β-Ga₂O₃ MESFETs With a Power Figure of Merit Over 0.9 GW/cm²

4. 4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²

5. A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing;Materials Science in Semiconductor Processing;2024-12

2. Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions;Applied Physics Letters;2024-08-12

3. Beta-Gallium Oxide Material and Device Technologies;Annual Review of Materials Research;2024-08-05

4. Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization;IEEE Electron Device Letters;2024-08

5. 3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism;Applied Physics Letters;2024-06-10