High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA
2. Materials Department, University of California, Santa Barbara, CA, USA
Funder
II-VI Foundation Block Gift Program
Air Force Office of Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9903996/09849050.pdf?arnumber=9849050
Reference33 articles.
1. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
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3. Source-field-plated ?-Ga2O3 MOSFET with record power figure of merit of 50.4 MW/cm2;lv;IEEE Electron Device Lett,2019
4. A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance
5. Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2
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