A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance
Author:
Funder
Division of Electrical, Communications and Cyber Systems
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab2e86/pdf
Reference26 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
2. A review of Ga2O3materials, processing, and devices
3. 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers
4. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
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