Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga<sub>2</sub>O<sub>3</sub>/NiO Semiconductors-Reference-Cited by-同舟云学术

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Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Published:2024-01-26 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yuvaraja Saravanan¹^ORCID,Khandelwal Vishal¹,Krishna Shibin¹^ORCID,Lu Yi¹^ORCID,Liu Zhiyuan¹^ORCID,Kumar Mritunjay¹,Tang Xiao¹^ORCID,Maciel García Glen Isaac¹,Chettri Dhanu¹,Liao Che-Hao¹,Li Xiaohang¹^ORCID

Affiliation:

1. Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c15778

Reference50 articles.

1. Papertronics: Multigate paper transistor for multifunction applications

2. Recyclable, Flexible, Low-Power Oxide Electronics

3. Mobility–stability trade-off in oxide thin-film transistors

4. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

5. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

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