Towards first-principles predict of doped α-Ga2O3 based structural and electrical properties-Reference-Cited by-同舟云学术

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Towards first-principles predict of doped α-Ga2O3 based structural and electrical properties

Published:2024-08 Issue: Volume:40 Page:109902
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Liu Jing,Zhang Yijun,Zhang Qihao,Yang Xiaodong,Shen Yang

Publisher

Elsevier BV

Reference50 articles.

1. Metal oxides for optoelectronic applications;Yu;Nat. Mater.,2016

2. Past achievements and future challenges in the development of optically transparent electrodes;Ellmer;Nat. Photonics,2012

3. Group-III sesquioxides: growth, physical properties and devices;Von Wenckstern;Adv. Electron. Mater.,2017

4. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

5. Ultrawide-bandgap semiconductors: research opportunities and challenges;Tsao;Adv. Electron. Mater.,2018

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