Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation-Reference-Cited by-同舟云学术

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Investigation of β-Ga₂O₃ MOSFET With Double Drift Layers by TCAD Simulation

Published:2024-01 Issue:1 Volume:71 Page:496-501
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jia Xiaole¹,Wang Yibo²^ORCID,Fang Cizhe³,Hu Haodong¹^ORCID,Liu Yan¹^ORCID,Luo Zhengdong¹,Hao Yue¹^ORCID,Han Genquan¹^ORCID

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, China

3. Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou, China

Funder

National Natural Science Foundation of China

Jiangsu Funding Program for Excellent Postdoctoral Talent

CAS Special Research Assistant (SRA) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10346605.pdf?arnumber=10346605

Reference41 articles.

1. β-Gallium oxide power electronics

2. A review of Ga2O3materials, processing, and devices

3. Development of gallium oxide power devices

4. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

5. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

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