MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5109678
Reference39 articles.
1. Brillouin zone and band structure of β-Ga2O3
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4. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
5. Semiconductors for high‐voltage, vertical channel field‐effect transistors
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