Abstract
Abstract
β-Ga2O3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages (V
BR) and ON currents (I
DMAX). A sandwiched SiN
x
dielectric field plate design is utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L
GD = 34.5 μm exhibits an I
DMAX of 56 mA mm−1, a high I
ON/I
OFF ratio >108 and a very low reverse leakage until catastrophic breakdown at ∼4.4 kV. A power figure of merit (PFOM) of 132 MW cm−2 was calculated for a V
BR of ∼4.4 kV. The reported results are the first >4 kV class Ga2O3 transistors to surpass the theoretical unipolar FOM of silicon.
Funder
II-VI Foundation
U.S. Department of Defense
Air Force Office of Scientific Research
NSF
Subject
General Physics and Astronomy,General Engineering
Cited by
39 articles.
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