Design of lateral β-Ga2O3 MOSFET with PFOM of 769.42 MW cm–2

Abstract

Abstract The Power figure of Merit (PFOM = Vbr 2/Ron,sp) is used to evaluate the performance of Gallium Oxide (β-Ga2O3) power devices. In this study, a lateral β-Ga2O3 MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3 μm, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm–2. Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37 μm, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 1017 cm−3. This study provides a new approach for the design of Gallium Oxide power devices.