Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
Author:
Affiliation:
1. Department of Electrical Engineering, University at Buffalo, Buffalo, NY, USA
2. Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH, USA
Funder
Air Force Office of Scientific Research
NSF
Sub-Contract on National Aeronautics and Space Administration (NASA) Small Business Innovation Research program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/9965979/9933753-aam.pdf
Reference28 articles.
1. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
2. 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current;li;IEDM Tech Dig,2018
3. 1230 V ?-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 ?A/cm2;li;Appl Phys Lett,2018
4. 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes
5. High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
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