1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 76th Device Research Conference (DRC)
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Author:

Li Wenshen,Nomoto Kazuki,Hu Zongyang,Tanen Nicholas,Sasaki Kohei,Kuramata Akito,Jena Debdeep,Xing Huili Grace

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8424808/8442143/08442245.pdf?arnumber=8442245

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

2. Turn-On Voltage Instability of β-Ga₂O₃ Trench Schottky Barrier Diodes With Different Fin Channel Orientations;IEEE Transactions on Electron Devices;2024-06

3. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18

4. MOCVD Growth of β-Ga₂O₃ on (001) Ga₂O₃ Substrates;Crystal Growth & Design;2024-04-10

5. Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination;IEEE Transactions on Electron Devices;2024-03

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