P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures
Author:
Affiliation:
1. Virginia Tech,Center for Power Electronics Systems,Blacksburg,VA,USA
Funder
National Science Foundation
Office of Naval Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382226.pdf?arnumber=10382226
Reference24 articles.
1. Multidimensional device architectures for efficient power electronics
2. A survey of acceptor dopants forβ-Ga2O3
3. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
4. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
5. (Ultra)Wide-Bandgap Vertical Power FinFETs
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