Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling-Reference-Cited by-同舟云学术

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Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Afroz Shamima,Vasen Timothy,Novak Brian,Nagamatsu Ken A.,Shea Patrick,Wanis Sam,Howell Robert S.,Chang Josephine

Funder

Defense Advanced Research Projects Agency (DARPA)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682467.pdf?arnumber=9682467

Reference5 articles.

1. Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance

2. The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

3. Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

4. Optimizing performance of Super-Lattice Castellated Field Effect Transistors

5. The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P _out of 10.87 W/mm With 43% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

2. Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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