Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification-Reference-Cited by-同舟云学术

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Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

Published:2020-08 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE/MTT-S International Microwave Symposium (IMS)
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Author:

Chang Josephine,Afroz Shamima,Novak Brian,Merkel Jordan,Nagamatsu Ken,Howell Robert

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9212188/9223768/09224099.pdf?arnumber=9224099

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity;IEEE Transactions on Electron Devices;2023-11

2. AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P _out of 10.87 W/mm With 43% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

4. Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz;IEEE Electron Device Letters;2023-01

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