AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality-Reference-Cited by-同舟云学术

AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Casamento Joseph¹,Nomoto Kazuki²,Nguyen Thai-Son¹,Lee Hyunjea²,Savant Chandrasekhar¹,Li Lei¹,Hickman Austin²,Maeda Takuya³,Shao Yu-Tsun⁴,Encomendero Jimy²,Gund Ved²,Vasen Timothy⁵,Afroz Shamima⁵,Hannan Daniel¹,Muller David A.⁴,Xing Huili Grace¹,Jena Debdeep¹

Affiliation:

1. Cornell University,Department of Materials Science and Engineering,Ithaca,NY,USA,14853

2. School of Electrical and Computer Engineering, Cornell University,Ithaca,NY,USA,14853

3. Kavli Institute at Cornell for Nanoscale Science, Cornell University,Ithaca,NY,USA,14853

4. School of Applied and Engineering Physics, Cornell University,Ithaca,New York,USA,14853

5. Northrop Grumman Mission Systems Advanced Technology Laboratory,Linthicum,Maryland,USA,21090

Funder

Semiconductor Research Corporation (SRC)

Northrop Grumman

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310921.pdf?arnumber=10310921

Reference16 articles.

1. AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

2. ScAIN-GaN Transistor Technology for Millimeter-wave Ultra-high Power and Efficient MMICs;chumbes;IEEE/MTT-S International Microwave Symposium - IMS,2022

3. GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P _out of 10.87 W/mm With 43% PAE at 94 GHz

4. ScGaN and ScAlN: emerging nitride materials

5. ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

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