AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity-Reference-Cited by-同舟云学术

AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

Published:2023-11 Issue:11 Volume:70 Page:5570-5576
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Azad Md. Tasnim¹^ORCID,Hossain Toiyob¹^ORCID,Sikder Bejoy¹^ORCID,Xie Qingyun²^ORCID,Yuan Mengyang²^ORCID,Yagyu Eiji³,Teo Koon Hoo⁴,Palacios Tomás²^ORCID,Chowdhury Nadim¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

2. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA

3. Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan

4. Mitsubishi Electric Research Laboratories, Cambridge, MA, USA

Funder

Bangladesh University of Engineering and Technology

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/10294316/10251828-aam.pdf

Reference34 articles.

1. The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

2. Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

3. Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs

4. Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

5. High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

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