Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs-Reference-Cited by-同舟云学术

Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs

Published:2022-06-19 Issue: Volume: Page:
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Container-title:2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
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Author:

Moon Jeong-Sun¹,Grabar Bob¹,Wong Joel¹,Tai Joe¹,Arkun Erdem¹,Morales Didiel V.¹,Dao Chuong¹,Bharadwaj Shyam¹,Fanning Dave¹,Venkatesan Nivedhita²,Fay Patrick²

Affiliation:

1. HRL Laboratories,USA

2. University of Notre Dame,Department of Engineering,USA

Funder

DARPA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865424.pdf?arnumber=9865424

Reference18 articles.

1. Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs

2. GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

3. Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

4. Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

5. 360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

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3. AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity;IEEE Transactions on Electron Devices;2023-11

4. A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/P_dc LFOM at 48 GHz;IEEE Journal of Solid-State Circuits;2023-09

5. High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11