Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V<inf>t</inf> engineering for transconductance compensation-Reference-Cited by-同舟云学术

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Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
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Author:

Joglekar Sameer,Radhakrishna Ujwal,Piedra Daniel,Antoniadis Dimitri,Palacios Tomas

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268457.pdf?arnumber=8268457

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages;IEEE Transactions on Electron Devices;2024-03

2. A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs;IEEE Journal of the Electron Devices Society;2024

3. Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of L_GS and L_G on the Source Access Resistance;IEEE Journal of the Electron Devices Society;2024

4. Impact of the Scaling of LGS and LG on the On-State Breakdown Voltage of InAlN/GaN HFETs With Localized Fin Under the Gate Electrode;IEEE Journal of the Electron Devices Society;2024

5. A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness;Science China Information Sciences;2023-12-19

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