A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-022-3720-9.pdf
Reference4 articles.
1. Nagy W, Brown J, Borges R, et al. Linearity characteristics of microwave-power GaN HEMTs. IEEE Trans Microwave Theor Techn, 2003, 51: 660–664
2. Joglekar S, Radhakrishna U, Piedra D, et al. Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2017
3. Moon J, Grabar B, Wong J, et al. Ultra-linear and high-efficiency GaN technology for 5G and beyond. In: Proceedings of IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), 2022. 5–7
4. Song W J, Zheng Z, Chen T, et al. RF linearity enhancement of GaN-on-Si HEMTs with a closely coupled doublechannel structure. IEEE Electron Device Lett, 2021, 42: 1116–1119
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