Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach-Reference-Cited by-同舟云学术

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Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach

Published:2024-06 Issue:6 Volume:71 Page:3582-3589
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Beleniotis Petros¹^ORCID,Zervos Christos¹^ORCID,Krause Sascha²^ORCID,Chevtchenko Serguei²,Ritter Dan³^ORCID,Rudolph Matthias¹^ORCID

Affiliation:

1. Institute of Electrical Engineering and Information Science, Brandenburg University of Technology Cottbus–Senftenberg, Cottbus, Germany

2. Ferdinand-Braun-Institut (FBH), Berlin, Germany

3. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, Israel

Funder

Deutsche Forschungsgemeinschaft

German Ministry of Education and Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10506567.pdf?arnumber=10506567

Reference29 articles.

1. Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I

2. Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment

3. TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions

4. An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

2. A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs;IEEE Transactions on Electron Devices;2024-07

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