TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions

Abstract

We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditions with the Harmonic Balance algorithm. The capability of the model is demonstrated studying the low-frequency dispersion of a 150 nm gate-length AlGaN/GaN HEMT output admittance YDD as a function of the trap energy of Fe-induced buffer traps. The real part of YDD exhibits strong frequency dispersion and an important degradation of the output resistance at high frequency. The imaginary part is characterized by a peak at a frequency decreasing with trap energy deeper in the gap, in agreement with experimental data on similar structures. Distributed local sources show that YDD is most sensitive to trap energy variations localized in the buffer region under the gate, peaking under the unsaturated portion of channel towards the source. Trap variations affect the output admittance when localized in depth into the buffer up to a 100 nm distance from the channel.