Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-48711-8_12
Reference17 articles.
1. Wen, Z., Mao, S., Wu, Y., Xu, R., Yan, B., Xu, Y.: A quasi-physical large-signal statistical model for 0.15 $$\mu $$m AlGaN/GaN HEMTs process. In: 2019 IEEE MTT-S International Microwave Symposium (IMS) (2019). https://doi.org/10.1109/MWSYM.2019.8700840
2. Williams, S., Varahramyan, K.: A new TCAD-based statistical methodology for the optimization and sensitivity analysis of semiconductor technologies. IEEE Trans. Semicond. Manuf. 13, 208–218 (2000). https://doi.org/10.1109/66.843636
3. Chordia, A., Hemaram, S., Tripathi, J.N.: A swarm intelligence based automated framework for variability analysis. In: 2020 IEEE MTT-S Latin America Microwave Conference (2020). https://doi.org/10.1109/LAMC50424.2021.9602347
4. Donati Guerrieri, S., Ramella, C., Catoggio, E., Bonani, F.: Bridging the gap between physical and circuit analysis for variability-aware microwave design: modeling approaches. Electronics 11(6), 860 (2022). https://doi.org/10.3390/electronics11060860
5. Donati Guerrieri, S., Ramella, C., Catoggio, E., Bonani, F.: Bridging the gap between physical and circuit analysis for variability-aware microwave design: power amplifier design. Electronics 11(18), 2832 (2022). https://doi.org/10.3390/electronics11182832
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