A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs-Reference-Cited by-同舟云学术

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A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs

Published:2024-07 Issue:7 Volume:71 Page:4058-4065
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Beleniotis Petros¹^ORCID,Krause Sascha²^ORCID,Zervos Christos¹^ORCID,Rudolph Matthias¹^ORCID

Affiliation:

1. Institute of Electrical Engineering and Information Science, Brandenburg University of Technology Cottbus-Senftenberg, Cottbus, Germany

2. Ferdinand-Braun-Institut (FBH), Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

German Ministry of Education and Research (BMBF)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10529219.pdf?arnumber=10529219

Reference25 articles.

1. A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

2. Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design

3. Robust stacked GaN-based low-noise amplifier MMIC for receiver applications

4. Analysis of the Survivability of GaN Low-Noise Amplifiers

5. Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive

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