GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P out of 10.87 W/mm With 43% PAE at 94 GHz
Author:
Affiliation:
1. Northrop Grumman Mission Systems, Linthicum, MD, USA
Funder
Defense Advanced Research Projects Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10144809/10122235.pdf?arnumber=10122235
Reference19 articles.
1. Tu4E-4 Multi-channel Schottky-gate BRIDGE HEMT Technology for Millimeter-Wave Power Amplifier Applications
2. 1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
3. Thermal Transport in Superlattice Castellated Field Effect Transistors
4. Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling
5. Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification
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