Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors
Author:
Affiliation:
1. H. H. Wills Physics Laboratory, Centre for Device Thermography, University of Bristol, Bristol, U.K.
2. Northrop Grumman Mission Systems, Linthicum, MD, USA
Funder
Northrop Grumman Mission System University Research Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10294238/10239139.pdf?arnumber=10239139
Reference23 articles.
1. Reverse-bias stability and reliability of hole-barrier free E-mode LPCVD-SiNx/GaN MIS-FETs;hua;IEDM Tech Dig,2017
2. GaN SLCFET Technology for Next Generation mmW Systems, Demonstrating P out of 10.87 W/mm With 43% PAE at 94 GHz
3. Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors
4. High conductivity modulation doped AlGaN/GaN multiple channel heterostructures
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