Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target

Abstract

Abstract In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low-field scattering mechanisms are described. Extremely high donor concentrations above 3 × 1020 cm−3 at low process temperatures (<800 °C) with specific resistivities below 0.5 mΩcm were achieved. The degenerate nature of the sputtered films was verified via temperature-dependent Hall measurements (300–550 K) revealing negligible change in electron mobility and donor concentration. Scattering at ionized impurities was determined to be the major limiting factor with a minor contribution of polar optical-phonon scattering at high temperatures.