Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance-Reference-Cited by-同舟云学术

Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance

Published:2019-11 Issue: Volume: Page:
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Container-title:2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Nagamatsu Ken A.,Afroz Shamima,Gupta Shalini,Wanis Sam,Hartman Jeffrey,Stewart Eric J.,Shea Patrick,Renaldo Karen,Howell Robert S.,Novak Brian,Drechsler Annaliese,Chang Josephine,Dawson Dale,Freitag Ron,Frey Kevin,Farrell Monique,Siddiqi Georges

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8961327/8972708/08972728.pdf?arnumber=8972728

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications;Micromachines;2023-07-28

2. SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

3. Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

4. Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

5. GaN FinFETs and trigate devices for power and RF applications: review and perspective;Semiconductor Science and Technology;2021-03-31