SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process-Reference-Cited by-同舟云学术

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Vasen Timothy¹,Novak Brian¹,Scimonelli Marc¹,Frey Kevin¹,Saad Mustapha¹,Saia Abbey¹,Grisafe Benjamin¹,Nagamatsu Ken A.¹,Chang Josephine¹,Wheeler Virginia²,Hobart Karl²,Koehler Andrew D.²,Shea Patrick¹,Campen Stephen Van¹,Howell Robert S.¹,Afroz Shamima¹

Affiliation:

1. Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090

2. US Naval Research Laboratory,Washington D.C,20375

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051706.pdf?arnumber=10051706

Reference16 articles.

1. High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

2. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

3. Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

4. 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

5. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01

2. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07