Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz-Reference-Cited by-同舟云学术

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Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Makiyama K.,Ozaki S.,Ohki T.,Okamoto N.,Minoura Y,Niida Y,Kamada Y.,Joshin K.,Watanabe K.,Miyamoto Y

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409659.pdf?arnumber=7409659

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research and Development of Compound Semiconductor Materials and Devices for Wireless Communication;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01

2. First Demonstration of an N-Polar InAlGaN/GaN HEMT;IEEE Electron Device Letters;2024-03

3. Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques;Applied Physics Express;2023-09-01

4. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate;Electronics;2023-07-06

5. N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-07

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