Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

Published:2016 Issue:7 Volume:5 Page:Q204-Q207
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Shahin David I.,Anderson Travis J.,Wheeler Virginia D.,Tadjer Marko J.,Koehler Andrew D.,Hobart Karl D.,Eddy Charles R.,Kub Francis J.,Christou Aris

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

2. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

3. Degradation of 0.25 μm GaN HEMTs under high temperature stress test

4. Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process

5. Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

2. Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs;physica status solidi (a);2017-09-29

3. ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices;ECS Transactions;2017-08-14

4. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air;Applied Physics Letters;2017-06-19

5. Fabrication of nanopower generators using thin atomic layer deposited films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-01

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