Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Published:2017-09-29 Issue:12 Volume:214 Page:1700691
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lalinský Tibor¹,Vanko Gabriel¹,Dobročka Edmund¹,Osvald Jozef¹,Babchenko Oleg¹,Dzuba Jaroslav¹,Veselý Marián²,Vančo L'ubomír²,Vogrinčič Peter²,Vincze Andrej³

Affiliation:

1. Institute of Electrical Engineering at Slovak Academy of Sciences; Dúbravská cesta 9 841 04 Bratislava Slovakia

2. Slovak University of Technology, University Science Park Bratislava Centre; Vazovova 5 812 43 Bratislava Slovak Republic

3. International Laser Centre; Ilkovičova 3 841 04 Bratislava Slovakia

Funder

SASPRO Programme

Agentúra na Podporu Výskumu a Vývoja

Ministerstvo školstva, vedy, výskumu a športu Slovenskej republiky

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

2. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

3. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

4. GaN HEMT reliability

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical current transport processes in MOS-HEMT heterostructures;Applied Surface Science;2020-10

2. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes;Applied Surface Science;2018-12

3. Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C;Diamond and Related Materials;2018-10