Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4707163
Reference20 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. High-power AlGaN/GaN HEMTs for Ka-band applications
3. Applications of SiC MESFETs and GaN HEMTs in power amplifier design
4. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
5. An insulator-lined silicon substrate-via technology with high aspect ratio
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