Reliability Issues in GaN Electronic Devices

Author:

Ťapajna Milan,Koller Christian

Publisher

Wiley

Reference149 articles.

1. Rosina M.(2018).GaN and SiC power device: market overview.Semicon Europa Munich Germany (13–16 November 2018).

2. Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

3. JESD22‐A108(2017).Temperature bias and operating life. Joint Electron Device Engineering Council (JEDEC).

4. JEP118A(2018).Guidelines for GaAs MMIC PHEMT/MESFET and HBT reliability accelerated life testing. Joint Electron Device Engineering Council (JEDEC).

5. McPherson J.W.(2018).Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors.2018 IEEE International Reliability Physics Symposium (IRPS) Burlingame CA USA (11–15 March 2018) pp. 3B.1‐1–3B.1‐8.

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