Unveiling T<sub>max</sub> Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements-Reference-Cited by-同舟云学术

Unveiling T_max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

Published:2023-03 Issue:1 Volume:23 Page:72-79
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Zafar Salahuddin¹^ORCID,Durna Yilmaz¹^ORCID,Kocer Hasan²^ORCID,Akoglu Busra Cankaya²^ORCID,Aras Yunus Erdem¹^ORCID,Odabasi Oguz³^ORCID,Butun Bayram²^ORCID,Ozbay Ekmel⁴^ORCID

Affiliation:

1. Nanotechnology Research Center and the Department of Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey

2. Nanotechnology Research Center, Bilkent University, Ankara, Turkey

3. Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI, USA

4. Nanotechnology Research Center, the Department of Electrical and Electronics Engineering, the Department of Physics, and the Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, Turkey

Funder

Turkish Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10063987/09993798.pdf?arnumber=9993798

Reference50 articles.

1. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

2. Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs

3. Lifetesting GaN HEMTs With Multiple Degradation Mechanisms

4. GaN HEMT reliability

5. Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

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