Vertical current transport processes in MOS-HEMT heterostructures-Reference-Cited by-同舟云学术

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Vertical current transport processes in MOS-HEMT heterostructures

Published:2020-10 Issue: Volume:527 Page:146605
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Racko Juraj,Lalinský Tibor,Mikolášek Miroslav,Benko Peter,Thiele Sebastian,Schwierz Frank,Breza Juraj

Funder

Slovak Research and Development Agency

APVV

VEGA

Ministry of Education, Science, Research and Sport of the Slovak Republic

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Current transport in metal-semiconductor barriers;Crowell;Solid-State Electron.,1996

2. Extended thermionic emission-diffusion theory of charge transport through a Schottky diode;Racko;Solid-State Electron.,1996

3. An accurate numerical steady-state one-dimensional solution of the P-N junction;De Mari;Solid-State Electron.,1968

4. Deriving the exchange times for a model of trap-assisted tunnelling;Racko;J. Electr. Eng.,2020

5. A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times;Racko;Appl. Surf. Sci.,2014

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