The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching-Reference-Cited by-同舟云学术

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The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Howell Robert S.,Stewart Eric J.,Freitag Ron,Parke Justin,Nechay Bettina,Cramer Harlan,King Matthew,Gupta Shalini,Hartman Jeffrey,Snook Megan,Wathuthanthri Ishan,Ralston Parrish,Renaldo Karen,Henry H. George,Clarke R. Chris

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047033.pdf?arnumber=7047033

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-mechanics analysis and modeling of the alloyed ohmic contact proximity in GaN HEMTs using µRaman spectroscopy;Journal of Physics D: Applied Physics;2024-07-17

2. Multi-channel GaN varactors and their current conduction mechanisms;Applied Physics Letters;2024-07-15

3. Thermal engineering increases current density in AlGaN/GaN superlattice devices;Applied Physics Letters;2024-07-01

4. Design of multi-channel heterostructures for GaN devices;Japanese Journal of Applied Physics;2024-03-01

5. Design of Low Loss Radio Frequency Switch Device Based on Double-Channel InAlN/GaN HEMT;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

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