Bipolar and Unipolar Cycling Behavior in Ferroelectric Scandium-doped Aluminum Nitride
Author:
Affiliation:
1. Institute of Microelectronics Agency for Science, Technology and Research (A*STAR),Singapore
Funder
Science and Engineering Research Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9870057/9870041/09870042.pdf?arnumber=9870042
Reference14 articles.
1. Aluminum scandium nitride-based metal– ferroelectric–metal diode memory devices with high on/off ratios;liu;Appl Phys Lett,2021
2. Multiscale Modeling of Al 0.7 Sc 0.3 Nbased FeRAM: the Steep Switching, Leakage and Selector-free Array;liu;2021 IEEE International Electron Devices Meeting (IEDM),2021
3. Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory
4. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films
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3. Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching;Nano Letters;2023-07-31
4. In-wafer Stress-dependent Leakage Current in Ferroelectric Scandium-doped Aluminum Nitride;2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2023-07-23
5. First Order Reversal Curves for the Evaluation of Thickness Dependent Ferroelectric Switching in Al0.7Sc0.3N Film;2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2023-07-23
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