Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory-Reference-Cited by-同舟云学术

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Published:2021-04-21 Issue:9 Volume:21 Page:3753-3761
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liu Xiwen¹,Wang Dixiong¹,Kim Kwan-Ho¹,Katti Keshava¹,Zheng Jeffrey²,Musavigharavi Pariasadat¹²^ORCID,Miao Jinshui¹,Stach Eric A.²³^ORCID,Olsson Roy H.¹,Jariwala Deep¹^ORCID

Affiliation:

1. Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

2. Material Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

3. Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Funder

U.S. Department of Defense

University of Pennsylvania

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c05051

Reference60 articles.

1. A new solid state memory resistor

2. Overview of emerging nonvolatile memory technologies

3. Current Status of Ferroelectric Random-Access Memory

4. Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

5. Ferroelectric Random Access Memories

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