1. Overview of emerging nonvolatile memory technologies
2. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
3. S. Dünkel ,
M. Trentzsch ,
R. Richter ,
P. Moll ,
C. Fuchs ,
O. Gehring ,
M. Majer ,
S. Wittek ,
B. Müller ,
T. Melde ,
H. Mulaosmanovic ,
S. Slesazeck ,
S. Müller ,
J. Ocker ,
M. Noack ,
D.A. Löhr ,
P. Polakowski ,
J. Müller ,
T. Mikolajick ,
J. Höntschel ,
B. Rice ,
J. Pellerin , and
S. Beyer , Technical Digest-International Electron Devices Meeting (IEDM) (2018), p. 19.7.1.
4. T.Y. Wu ,
H.H. Huang ,
Y.H. Chu ,
C.C. Chang ,
M.H. Wu ,
C.H. Hsu ,
C.T. Wu ,
M.C. Wu ,
W.W. Wu ,
T.S. Chang ,
H.Y. Lee ,
S.S. She ,
W.C. Lo , and
T.H. Hou , Technical Digest—Int. Electron Devices Meeting (IEDM) (2020), pp. 6.3.1–6.3.4.
5. Low-power linear computation using nonlinear ferroelectric tunnel junction memristors