First Order Reversal Curves for the Evaluation of Thickness Dependent Ferroelectric Switching in Al0.7Sc0.3N Film
Author:
Affiliation:
1. Institute of Microelectronics Agency for Science Technology and Research (A*STAR),Singapore
Funder
Science and Engineering Research Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10265288/10265319/10265482.pdf?arnumber=10265482
Reference10 articles.
1. Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
2. Ferroelectric Field Effect Transistors Based on PZT and IGZO
3. Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness
4. Bipolar and Unipolar Cycling Behavior in Ferroelectric Scandium-doped Aluminum Nitride
5. Multiscale Modeling of Al0.7Sc0.3N-based FeRAM: the Steep Switching, Leakage and Selector-free Array
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