Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films-Reference-Cited by-同舟云学术

Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

Published:2020-09-21 Issue:11 Volume:128 Page:114103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yasuoka Shinnosuke¹,Shimizu Takao¹²^ORCID,Tateyama Akinori¹,Uehara Masato³^ORCID,Yamada Hiroshi³^ORCID,Akiyama Morito³^ORCID,Hiranaga Yoshiomi⁴^ORCID,Cho Yasuo⁴^ORCID,Funakubo Hiroshi¹⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

2. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan

3. Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tosu 841-0052, Japan

4. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

5. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8502, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015281

Reference41 articles.

1. 5GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography

2. High-frequency SAW filters based on diamond films

3. Monolithic integrated SAW filter based on AlN for high-frequency applications

4. The thermal stability of AlN

5. High Temperature and High Pressure Response of Aluminum Nitride Thin Films Prepared on Inconel Substrates

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