High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films-Reference-Cited by-同舟云学术

High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

Published:2024-07-15 Issue:3 Volume:125 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Sun Nana¹^ORCID,Okamoto Kazuki¹^ORCID,Yasuoka Shinnosuke¹^ORCID,Doko Soshun²^ORCID,Matsui Naoko²^ORCID,Irisawa Toshikazu²^ORCID,Tsunekawa Koji²^ORCID,Katase Takayoshi³^ORCID,Koganezawa Tomoyuki⁴^ORCID,Nakatani Tomotaka⁴,Kumara Rosantha⁴^ORCID,Sakata Osami⁴^ORCID,Funakubo Hiroshi¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Tokyo Institute of Technology 1 , Yokohama 226-8502, Japan

2. Canon ANELVA Corporation 2 , 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan

3. MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology 3 , Yokohama 226-8501, Japan

4. Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI) 4 , 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Hyogo, Japan

Abstract

The changes in the crystal structure and ferroelectric properties of (Al0.8Sc0.2)N films sandwiched between Pt and TiN electrodes were investigated by subjecting the films to post-heat-treatment at various temperatures up to 600 °C in both H2 and Ar gases. The remanent polarization underwent slight change, whereas the coercive field strengthened by approximately 9% as a result of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change is much smaller than that reported for ferroelectric (Hf,Zr)O2 films as well as for Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 °C and is almost independent of the Pt and TiN electrodes. The high stability of (Al,Sc)N films with both Pt and TiN electrodes under H2 atmosphere is highly promising to stabilize the properties through the device fabrication process.

Funder

Element Strategy Initiative to Form a Core Research Center

MEXT Initiative to Establish Next-generation Novel Intergrated Circuits Centers

MEXT Program: Data Creation and Utilization Type Material Research and Development Project

Japan Society for the Promotion of Science

Japan Synchrotron Radiation Research Institute

Japan Science and Technology Agency

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0202063/20048831/032904_1_5.0202063.pdf

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