Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching
Author:
Affiliation:
1. Namlab gGmbH, Nöthnitzer Strasse 64a, 01187 Dresden, Germany
2. Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany
Funder
Deutsche Forschungsgemeinschaft
Saxonian State budget approved by the delegates of the Saxon State Parliament
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02351
Reference44 articles.
1. Next generation ferroelectric materials for semiconductor process integration and their applications
2. Nanoscale resistive switching memory devices: a review
3. Memory technology—a primer for material scientists
4. AlScN: A III-V semiconductor based ferroelectric
5. Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
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