Nanoscale resistive switching memory devices: a review
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/ab2084/pdf
Reference182 articles.
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4. In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy
5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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