Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration-Reference-Cited by-同舟云学术

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Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration

Published:2024-08-01 Issue: Volume: Page:
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Met.

Author:

Zhu Zheng-Xu,Zhao Hao-Yu,Wang He,Wang Zi-Jian,Li Jia-Chen,Shen Sheng-Chun,Yin Yue-Wei

Funder

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12598-024-02920-5.pdf

Reference41 articles.

1. Lanza M, Sebastian A, Lu WD, Le Gallo M, Chang MF, Akinwande D, Puglisi FM, Alshareef HN, Liu M, Roldan JB. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science. 2022;376(6597):9979. https://doi.org/10.1126/science.abj9979.

2. Guo T, Sun B, Ranjan S, Jiao YX, Wei L, Zhou YN, Wu YA. From memristive materials to neural networks. ACS Appl Mater Interfaces. 2020;12(49):54243. https://doi.org/10.1021/acsami.0c10796.

3. Wang SB, Song LK, Chen WB, Wang GY, Hao E, Li C, Hu YH, Pan Y, Nathan A, Hu GH, Gao S. Memristor-based intelligent human-like neural computing. Adv Electron Mater. 2022;9(1):2200877. https://doi.org/10.1002/aelm.202200877.

4. Wang ZR, Wu HQ, Burr GW, Hwang CS, Wang KL, Xia QF, Yang JJ. Resistive switching materials for information processing. Nat Rev Mater. 2020;5(3):173. https://doi.org/10.1038/s41578-019-0159-3.

5. Chen ZW, Sun HY, Zhou X, Duan HL, Yan WS, Yin YW, Li XG. Continuous and fast magneto-ionic control of magnetism in Ta/Co/BiFeO3/SrRuO3 multiferroic heterostructure. J Materiomics. 2022;8(6):1141. https://doi.org/10.1016/j.jmat.2022.06.005.

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