Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey-Reference-Cited by-同舟云学术

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Published:2015-09-09 Issue:3 Volume:4 Page:586-613
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Lim Ee,Ismail Razali

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

http://www.mdpi.com/2079-9292/4/3/586/pdf

Reference110 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Memory leads the way to better computing

3. Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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