Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch-Reference-Cited by-同舟云学术

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

Published:2013-06-12 Issue:7 Volume:13 Page:3213-3217
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Choi Byung Joon¹,Torrezan Antonio C.¹,Norris Kate J.²,Miao Feng³,Strachan John Paul¹,Zhang Min-Xian¹,Ohlberg Douglas A. A.¹,Kobayashi Nobuhiko P.²,Yang J. Joshua¹,Williams R. Stanley¹

Affiliation:

1. Hewlett-Packard Laboratories, Palo Alto, California 94304, United States

2. Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, California 95064, United States

3. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401283q

Reference54 articles.

1. Overview of candidate device technologies for storage-class memory

2. Nanoionics-based resistive switching memories

3. Phase-change materials for rewriteable data storage

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