Resistive switching properties of a nanostructured layer of mixed ZrO2 phases obtained in low-pressure arc discharge plasma-Reference-Cited by-同舟云学术

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Resistive switching properties of a nanostructured layer of mixed ZrO2 phases obtained in low-pressure arc discharge plasma

Published:2024-09 Issue: Volume:227 Page:113375
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Karpov I.V.,Fedorov L. Yu^ORCID,Abkaryan A.K.,Zharkov S.M.^ORCID,Molokeev M.S.,Ivanenko A.A.,Nemtsev I.V.,Irtyugo L.A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Reference34 articles.

1. Metal oxide resistive switching memory: materials, properties and switching mechanisms;Kumar;Ceram. Int.,2017

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling;Ielmini;Semicond. Sci. Technol.,2016

3. Investigation on the conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo simulator;Li;Sci. Rep.,2017

4. Resistive switching in transition metal oxides//Materials Today;Sawa,2008

5. Mechanisms of room temperature metastable tetragonal phase stabilisation in zirconia;Shukla;Int. Mater. Rev.,2005

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