Coumarin based non-volatile WORM device on a graphite coated paper substrate
Author:
Funder
SERB-DST, Govt. of India
CSIR, Govt. India
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10751-024-02118-2.pdf
Reference31 articles.
1. Bhattacharjee, S.K., Hussain, S.A., Paul, P.K., Bhattacharjee, D.: Carrier Type Exchange with the Sweep Direction in a WORM memory device. ACS Appl. Electron. Mater. 5, 3917–3924 (2023). https://doi.org/10.1021/acsaelm.3c00617
2. Sarkar, S., Rahman, F.Y., Banik, H., Majumdar, S., Bhattacharjee, D., Hussain, S.A.: Complementary resistive switching behavior in Tetraindolyl Derivative-based memory devices. Langmuir. 38, 9229–9238 (2022). https://doi.org/10.1021/acs.langmuir.2c01011
3. Bhattacharjee, S.K., Debnath, C., Hussain, S.A., Paul, P.K., Bhattachrjee, D.: Confirmation of charge carriers’ types based on HOMO-LUMO positions in the active layer of a WORM memory device. J. Mater. Sci: Mater. Electron. 35, 143 (2024). https://doi.org/10.1007/s10854-023-11840-6
4. Sarkar, S., Banik, H., Rahman, F.Y., Majumdar, S., Bhattacharjee, D., Hussain, S.A.: Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives. RSC Adv. 13, 26330–26343 (2023). https://doi.org/10.1039/D3RA03869F
5. Mu, B., Hsu, H.-H., Kuo, C.-C., Han, S.-T., Zhou, Y.: Organic small molecule-based RRAM for data storage and neuromorphic computing. J. Mater. Chem. C. 8, 12714–12738 (2020). https://doi.org/10.1039/D0TC02116D
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