AlScN: A III-V semiconductor based ferroelectric-Reference-Cited by-同舟云学术

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AlScN: A III-V semiconductor based ferroelectric

Published:2019-03-21 Issue:11 Volume:125 Page:114103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fichtner Simon¹²^ORCID,Wolff Niklas³^ORCID,Lofink Fabian²,Kienle Lorenz³,Wagner Bernhard¹²

Affiliation:

1. Materials and Processes for Micro/Nanosystem Technologies, Institute for Material Science, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany

2. Fraunhofer Institute for Silicon Technology (ISIT), Fraunhoferstr. 1, 25524 Itzehoe, Germany

3. Synthesis and Real Structure, Institute for Material Science, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany

Funder

Federal State of Schleswig-Holstein

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5084945

Reference49 articles.

1. Ferroelectric thin films: Review of materials, properties, and applications

2. Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

3. Physics of thin-film ferroelectric oxides

4. Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices

5. Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

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